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| RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09832. Features * 8A, 50V * rDS(ON) = 0.300 * UIS SOA Rating Curve * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFD8P05 RFD8P05SM RFP8P05 PACKAGE TO-251AA TO-252AA TO-220AB BRAND D8P05 D8P05 RFP8P05 Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD8P05SM9A. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 4-112 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999. RFD8P05, RFD8P05SM, RFP8P05 Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified RFD8P05, RFD8P05SM, RFP8P05 -50 -50 -8 -20 20 48 0.27 See Figure 6 -55 to 175 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20K) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(-10) Qg(TH) RJC RJA TO-251AA, TO-252AA TO-220AB VGS = 0 to -20V VGS = 0 to -10V VGS = 0 to -2V VDD = -40V, ID = 8A,RL = 5, IG(REF) = -0.3mA TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9) VGS = VDS, ID = 250A (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, TJ = 150oC VGS = 20V ID = 8A, VGS = -10V (Figure 7) VDD = -25V, ID 4A, RG = 9.1, RL = 6.25, VGS = -10V MIN -50 -2 TYP 16 30 42 20 MAX -4 1 25 100 0.300 60 100 80 40 2 3.125 100 62.5 UNITS V V A A nA ns ns ns ns ns ns nC nC nC oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -5V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: TC = 25oC Unless Otherwise Specified TEST CONDITIONS ISD = -8A ISD = -8A, dISD/dt = 100A/s MIN TYP MAX -1.5 125 UNITS V ns SYMBOL VSD trr 2. Pulse test: pulse width 300s, Duty Cycle 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 4-113 RFD8P05, RFD8P05SM, RFP8P05 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) ID, DRAIN CURRENT (A) Unless Otherwise Specified -10 -8 -6 -4 -2 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 IAS , AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] ID , DRAIN CURRENT (A) DC OPERATION OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 IDM 10 STARTING TJ = 25oC STARTING TJ = 150oC TC = 25oC TJ = 175oC 0.1 -1 -10 VDS , DRAIN TO SOURCE VOLTAGE (V) -100 1 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY IDS(ON), DRAIN TO SOURCE CURRENT (A) -20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -10V VGS = -9V 20 ID, DRAIN CURRENT (A) -16 16 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 25oC 175oC VGS = -8V -12 VGS = -7V -8 VGS = -6V -4 VGS = -5V 0 0 -2 -4 -6 -8 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -4V -10 12 -55oC 8 4 0 0 -3 -6 -9 -12 VGS , GATE TO SOURCE VOLTAGE (V) -15 FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS 4-114 RFD8P05, RFD8P05SM, RFP8P05 Typical Performance Curves 3.0 NORMALIZED ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE =0.5% MAX VGS = -10V, ID = -8A NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified 1.50 VGS = VDS, ID = -250A 1.25 1.00 0.75 0.50 0.25 0 -50 2.5 2.0 1.5 1.0 0.5 0 -50 0 50 100 150 200 0 50 100 150 200 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1000 2.0 ID = -250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 800 1.5 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 600 CISS 400 COSS 200 CRSS 1.0 0.5 0 -50 0 0 50 100 150 200 0 -5 -10 -15 -20 -25 TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE -50 VDS , DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS -37.5 GATE SOURCE VOLTAGE FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE -10 VDD = BVDSS -8 RL = 6.25 IG(REF) = 0.3mA VGS = 10V VGS , GATE TO SOURCE VOLTAGE (V) -25 0.75BVDSS 0.50BVDSS 0.25BVDSS -12.5 DRAIN TO SOURCE VOLTAGE 0 I I 20 G(REF) TIME (s) 80 G(REF) IG(ACT) IG(ACT) -6 -4 -2 0 NOTE: Refer to Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 4-115 RFD8P05, RFD8P05SM, RFP8P05 Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0 + VDD VDD 0V VGS DUT tP IAS 0.01 IAS tP BVDSS VDS FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS RL 0 VGS= -1V VGS VDD + Qg(TH) VDS -VGS Qg(-5) VDD Qg(TOT) 0 Ig(REF) VGS= -5V DUT Ig(REF) VGS= -10V FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 4-116 RFD8P05, RFD8P05SM, RFP8P05 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-117 |
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